Orientation-dependent stress build-up during the formation of epitaxial CoSi2

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 145-150

  Steegen, An ^a,c   Detavernier, C ^b   Lauwers, A ^a   Maex, K ^a,c   Van Meirhaeghe, R L ^b   Cardon, F ^b  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; STRESS RELAXATION; SUBSTRATES; TITANIUM; VOLUME FRACTION;

MECHANICAL STRESS;

COBALT COMPOUNDS;

EID: 0034817999     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00440-8     Document Type: Article

References (8)

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3. C. Wei, D. Fraser, M. Lawrence, A. Dass, T. Brat, in: Proceedings VMIC Conference, 1990, p. 233.
4. P.A. Flynn, D.S. Gardner, IEEE Trans. Electron. Devices ED34 (3) (1987).
5. A. Steegen, K. Maex, I. De Wolf, IEEE VLSI Techn. (1998) 200.
6. C.W.T. Bulle-Lieuwma, D.E.W. Vandenhoudt, J. Appl. Phys. 73 (7) (1993) 3220.
7. C. d'Arterroches, F. Arnaud d'Avitaya, Thin Solid Films 137 (1986) 351.
8. C. Detavernier, R.L. Van Meirhaeghe, K. Maex, F. Cardon, Appl. Phys. Lett., submitted.