High-power 735 nm GaAsP/AlGaAs laser diodes: Reliability and beam characteristics

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 2001, Pages 32-33

  Sumpf, B ^a   Hulsewede R ^a   Erbert, G ^a   Fricke, J ^a   Knauer, A ^a   Pittroff, W ^a   Ressel, P ^a   Sebastian, J ^a   Wenzel, H ^a   Trankle G ^a  

^a FBIH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; MEDICAL APPLICATIONS; PHOTODYNAMIC THERAPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BROAD AREA LASERS;

SEMICONDUCTOR LASERS;

EID: 0034804873     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2001.947426     Document Type: Conference Paper

References (1)

1. 1-y/AlGaAs (λ = 735 nm) QW diode laser