Highly manufacturable and high performance SDR/DDR 4Gb DRAM

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 7-8

  Kim, K N ^a   Jeong, H S ^a   Yang, W S ^a   Hwang, Y S ^a   Cho, C H ^a   Jeong, M M ^a   Park, S ^a   Ahn, S J ^a   Chun, Y S ^a   Shin, S H ^a   Park, J S ^a   Song, S H ^a   Lee, J Y ^a   Jang, S M ^a   Lee, C H ^a   Jeong, J H ^a   Cho, M H ^a   Yoon, H I ^a   Jeon, J S ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CHIP SCALE PACKAGES; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FAILURE ANALYSIS; INTERCONNECTION NETWORKS; LITHOGRAPHY; MIS DEVICES; TRANSISTORS;

MEMORY CELL CONTACT;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0034793533     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)