In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme ultraviolet lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 590-598

  Shiraishi, M ^a   Ishiyama, W ^a   Kandaka, N ^a   Oshino, T ^a   Murakami, K ^a  

^a NIKON CORPORATION   (Japan)

Author keywords

Extreme ultraviolet lithography; In situ stress measurement; Ion beam sputtering; Low stress multilayer; Mo Si multilayer

Indexed keywords

CAPACITORS; COMPRESSIVE STRESS; ION BEAMS; MOLYBDENUM; PHOTOLITHOGRAPHY; SILICON WAFERS; SPUTTER DEPOSITION; SPUTTERING; STRESS ANALYSIS; TENSILE STRESS;

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY;

MULTILAYERS;

EID: 0034764874     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436713     Document Type: Conference Paper

References (11)

1. Multilayer reflective coatings for extreme-ultraviolet lithography
2. An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering
3. Stress evolution in Mo/Si multilayers for high-reflectivity extreme ultraviolet mirrors
4. Ring-field extreme ultraviolet exposure system using aspherical mirrors
5. Stress reduction of molybdenum/silicon multilayers deposited by ion-beam sputtering
6. Low-stress molybdenum/silicon multilayer coatings for extreme ultraviolet lithography
7. Mechanical properties of thin films
8. Stress in films of silicon monoxide
9. A sensitive bending beam apparatus for measuring the stress in evaporated thin films
10. A UHV-compatible thin-film stress-measuring apparatus based on the cantilever beam principle