Numerical modelling accuracy assessment and optimization of a piezoresistive silicon pressure sensor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4516, Issue , 2001, Pages 139-148

  Wymyslowski, A ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Finite element modelling; Microsystems; Silicon pressure sensor; Taguchi experiment design method

Indexed keywords

ELECTRIC RESISTANCE; ERROR ANALYSIS; FINITE ELEMENT METHOD; MEMBRANES; OPTIMIZATION; STRESS CONCENTRATION;

PIEZORESISTIVE SILICON PRESSURE SENSORS;

SILICON SENSORS;

EID: 0034763522     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435914     Document Type: Conference Paper

References (9)

1. Silicon microsensors: Construction, design and performance
2. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers
3. Finite element modelling of silicon pressure sensor structures
4. The thermo-mechanical analysis of silicon piezoresistive pressure sensors
5. Silicon in mechanical sensors
6. FEM modeling of a piezoresistive silicon pressure sensor
7. The empirical verification of the FEM model of semiconductor pressure sensor
8. Numerical simulation and assesment of different piezoresistive silicon pressure sensor configuration