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Volumn 4343, Issue 1, 2001, Pages 646-653

Flatness correction of NZTE mask blank substrates

Author keywords

EUVL; Flatness; IBF; Mask Blanks; NZTE Material; Roughness; ULE ; ZERODUR

Indexed keywords

ATOMIC FORCE MICROSCOPY; ERROR CORRECTION; INTERFEROMETRY; ION BEAMS; NATURAL FREQUENCIES; PHOTOLITHOGRAPHY; POLISHING; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EXPANSION; THERMODYNAMIC STABILITY; ULTRAVIOLET RADIATION;

EID: 0034758360     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436634     Document Type: Article
Times cited : (5)

References (5)
  • 1
    • 84994411857 scopus 로고
    • Specification for extreme ultraviolet lithography mask substrates
    • 1. SEMI Draft Document 3148 Proposed EUVL standard (Rev. 7, 10/16/00) based on SEMI P1-92 SEMI, 805 East Middlefield Road, Mountain View, CA 94043
    • (1981) Semiconductor Equipment and Materials International


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.