Luminescence and electron transport properties of GaN and AlN layers

Radiation Measurements

Volumn 33, Issue 5, 2001, Pages 709-713

  Barfels, T ^a   Fitting, H J ^a   Gulans, A ^a   Jansons, J ^a   Springis, M ^a   Stolz, H ^a   Tale, I ^a   Veispals, A ^a  

^a UNIVERSITY OF LATVIA   (Latvia)

Author keywords

Bound excitons; Defect luminescence; III nitride; Radiation; Thin films

Indexed keywords

ALUMINUM NITRIDE; CATHODOLUMINESCENCE; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; EXCITONS; GALLIUM NITRIDE; GROUND STATE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SILICON; SUBSTRATES;

DEFECT LUMINESCENCE;

THIN FILMS;

EID: 0034742080     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4487(01)00088-9     Document Type: Article

References (8)

1. Exciton spectra of Cubic and Hexagonal GaN Epitaxial Films
2. Absorption, reflectance, and luminescence of GaN epitaxial layers
3. Epitaxial-growth and characterization of zincblende gallium nitride on (0 0 1) silicion
4. Growth of zinc blende-GaN on β-SiC by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
5. Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
6. The mechanism of recombination luminescence in heavily doped AlN:O
7. Thermoluminescence properties of AlN ceramics