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Talanta

Volumn 52, Issue 3, 2000, Pages 495-507

Grafting of phosphonate groups on the silica surface for the elaboration of ion-sensitive field-effect transistors

(4) Elbhiri, Zoubida a,b Chevalier, Yves a Chovelon, Jean Marc b,c Jaffrezic Renault, Nicole b

a UNIVERSITÉ DE SAVOIE (France)

b Ecole Centrale de Lyon (France)

c INST DE RECHERCHES SUR LA CATALYSE (France)

Author keywords

Calcium; Chemical grafting; ISFET; Phosphonate

Indexed keywords

CALCIUM; CHEMICAL BONDS; GRAFTING (CHEMICAL); MATHEMATICAL MODELS; POLARIZATION; SILICA;

MULTISTEP GRAFTING PROCESS; SITE-BINDING MODEL;

ENZYME IMMOBILIZATION;

CALCIUM ION; PHOSPHONIC ACID DERIVATIVE; SILICON DIOXIDE;

ARTICLE; CHEMICAL BOND; CHEMICAL REACTION; COMPLEX FORMATION; ION SELECTIVE ELECTRODE; NUCLEAR MAGNETIC RESONANCE; PH; POLARIZATION; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034734048 PISSN: 00399140 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-9140(00)00395-7 Document Type: Article

Times cited : (20)

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