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Sensors and Actuators, B: Chemical

Volumn 65, Issue 1, 2000, Pages 23-25

Influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor

(5) Liao, Hung Kwei a Chou, Jung Chuan b Chung, Wen Yaw a Sun, Tai Ping c Hsiung, Shen Kan a

a CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLYTES; EVAPORATION; FIELD EFFECT TRANSISTORS; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DIODES; SENSITIVITY ANALYSIS; THIN FILMS;

CAPACITANCE-VOLTAGE METHODS; ION-SENSITIVE FIELD-EFFECT TRANSISTORS (ISFET); ISOTHERMAL ANNEALING;

PH SENSORS;

EID: 0034733327 PISSN: 09254005 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-4005(99)00444-X Document Type: Article

Times cited : (12)

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