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0343083477
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note
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Ga-H (vw)].
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4
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0343955422
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-3. Of the 9812 independent reflections collected, 4427 were observed [I > 2σ(I)]. A routine absorption correction was applied by using SADABS and any decay correction was made with the SAINT program. The structure was solved by direct methods using the SHELXTL 5.1 Software Package. Each of the two bridging phosphorus atoms was found to be disordered over two adjacent positions with a refined occupancy factor of 0.50 for each position. The non-hydrogen atoms (except for the disordered phosphorus atoms) were refined anisotropically while hydrogen atoms were placed in ideal positions with their coordinates and thermal parameters riding on the attached carbon atoms (C-H 0.98 Å), the phosphorus atoms (P-H 1.50 Å) and the bridging gallium atom (Ga-H 1.50 Å). The final residual values based on 695 variable parameters and 4427 observed reflections [I > 2σ(I)] and R1 = 0.0637, wR2 = 0.1359 and those for all 9812 unique reflections are R1 = 0.1665, wR2 = 0.1711. CCDC 182/1538. See http://www.rsc.org/suppdata/cc/a9/a909451b/for crystallographic files in .cif format.
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