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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages 17108-17114

Simulation of thermoelectric properties of bismuth telluride single crystalline films grown on Si and SiO2 surfaces

(6) Kaddouri, H a Benet S a Charar, S b Makowaska Janusik, M c Tedenac, J C b Kityk, I V c

a UNIVERSITÉ DE PERPIGNAN (France)

b UNIV MONTPELLIER (France)

c Institute of Physics (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH DERIVATIVE; SILICON; SILICON DIOXIDE; TELLURIUM DERIVATIVE;

ARTICLE; CALCULATION; CRYSTAL STRUCTURE; ELECTRIC ACTIVITY; ENERGY; MOLECULAR DYNAMICS; SIMULATION; SURFACE PROPERTY; THICKNESS;

EID: 0034670862 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.17108 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.