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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 23, 2000, Pages 15291-15294

Mechanism of population inversion in uniaxially strained p-Ge continuous-wave lasers

(4) Odnoblyudov, M A a,b Yassievich, I N a,b Kagan, M S c Chao, K A a

a LUND UNIVERSITY (Sweden)

b IOFFE INSTITUTE (Russian Federation)

c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM;

ACOUSTICS; ARTICLE; CALCULATION; ELECTRIC FIELD; LASER; RADIATION SCATTERING; SEMICONDUCTOR; THEORY;

EID: 0034670702 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.15291 Document Type: Article

Times cited : (23)

References (12)

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2
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- Shank, C.V.¹ Zakharchenya, B.P.²

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- Sov. Phys. JETP 88, 51 (1999)
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- Altukhov, I.V.¹ Chirikova, E.G.² Kagan, M.S.³ Korolev, K.A.⁴ Sinis, V.P.⁵ Odnoblyudov, M.A.⁶ Yassievich, I.N.⁷

7
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- to be published
- Phys. Rev. B
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- private communication on unpublished data
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- Academic, New York
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.