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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 15, 2000, Pages 9955-9958

Conductance of the single-electron transistor for arbitrary tunneling strength

(3) Göppert, Georg a Hüpper, Bruno b Grabert, Hermann a

a UNIVERSITY OF FREIBURG (Germany)

b WEIZMANN INSTITUTE OF SCIENCE (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; DECOMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; MATHEMATICAL ANALYSIS; SEMICONDUCTOR; SIMULATION; TEMPERATURE DEPENDENCE;

EID: 0034667151 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.9955 Document Type: Article

Times cited : (13)

References (13)

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5
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- Single Charge Tunneling
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8
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9
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- and references therein
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10
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11
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12
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- unpublished
- Hüpper, B.¹

13
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- (1997) Phys. Rev. B , vol.56 , pp. 15782
- Golubev, D.S.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.