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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 16, 2000, Pages 10908-10913

Magnetoresistance and electronic structure of asymmetric GaAs/Al0.3Ga0.7As double quantum wells in an in-plane or tilted magnetic field

(6) Makarovskii, O N a,b Smrcka L a Vasek P a Jungwirth, T a,c Cukr, M a Jansen, L d

a INSTITUTE OF PHYSICS (Czech Republic)

b A USIKOV INSTITUTE OF RADIO PHYSICS AND ELECTRONICS (Ukraine)

c INDIANA UNIVERSITY (United States)

d GRENOBLE HIGH MAGNETIC FIELD LABORATORY (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER;

ARTICLE; CALCULATION; MAGNETIC FIELD; OSCILLATION; QUANTUM MECHANICS; RELIABILITY; STRUCTURE ACTIVITY RELATION;

EID: 0034667039 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.10908 Document Type: Article

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.