Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn2Ge2

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 268, Issue 1-2, 2000, Pages 123-127

  Sampathkumaran, E V ^a   Mallik, R ^a   Paulose, P L ^a   Majumdar, Subham ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

Electronic separation; LaMn2Ge2; Magnetoresistance; SmMn2Ge2

Indexed keywords

GERMANIUM COMPOUNDS; LANTHANUM COMPOUNDS; MAGNETIC MATERIALS; MAGNETORESISTANCE; SAMARIUM COMPOUNDS; SEPARATION; TEMPERATURE;

ELECTRONIC SEPARATION; LAMN2GE2; LOW TEMPERATURES; MAGNETIC COMPOUNDS; MAGNETIC LAYERS; MAGNETORESISTIVE; POLYCRYSTALLINE; SMMN2GE2;

MANGANESE COMPOUNDS;

CRYSTALLIZATION; ELECTRIC RESISTANCE; LOW TEMPERATURE PROCEDURES; MAGNETIC FIELD; REVIEW; TEMPERATURE DEPENDENCE;

EID: 0034599342     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(00)00122-5     Document Type: Article

References (17)

1. Heavy Fermions