Raman and SIMS studies of rapid thermal annealing effect of silicon ion implanted GaAs

Journal of Physics and Chemistry of Solids

Volumn 61, Issue 12, 2000, Pages 1927-1933

  Dilawar, N ^a   Varandani, D ^a   Chakraborty, B R ^a   Bandyopadhyay, A K ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ION IMPLANTATION; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

PHONON-PLASMON MODES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034559489     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(00)00082-2     Document Type: Article

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