Laser dressing effects in low-dimensional semiconductor systems

Solid State Communications

Volumn 117, Issue 2, 2000, Pages 83-87

  Brandi, H S ^a   Latge A ^b   Oliveira, L E ^c  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; MASS TRANSFER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

EFFECTIVE-MASS APPROXIMATION; KANE BAND-STRUCTURE MODELS;

HETEROJUNCTIONS;

EID: 0034544698     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00429-4     Document Type: Article

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