High temperature (T>300 K) light emitting diodes for 8-12 μm spectral range

Infrared Physics and Technology

Volumn 41, Issue 6, 2000, Pages 373-378

  Malyutenko, V ^a   Melnik, A ^a   Malyutenko, O ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; INFRARED IMAGING; LIGHT ABSORPTION; LIGHT EMITTING DIODES; MASS TRANSFER; THERMAL CONDUCTIVITY OF SOLIDS;

FREE CARRIER RADIATIONS; INFRARED LIGHT EMITTING DIODES;

INFRARED DEVICES;

EID: 0034544691     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(00)00056-6     Document Type: Article

References (6)

1. Moss T.S. Optical Properties of Semi-Conductors. 1959;Butterworths Scientific Publication, London.
2. Malyutenko V.K. Infrared Phys. 32:1991;291-302.
3. Malyutenko V.K., Botte V.A., Chernyakovsky V.I. Infrared Phys. 29:1989;155-158.
4. Malyutenko V.K., Liptuga A.I., Teslenko G.I., Botte V.A. Infrared Phys. 29:1989;693-700.
5. Malyutenko V.K., Teslenko G.I. Fizika i Tehnika Poluprovodnikov. 8:1989;1452-1457.
6. Moss T.S. Phys. Stat. Sol. (a). 8:1971;223-232.