High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 μm

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Volumn , Issue , 2000, Pages 63-64

  Choi, H K ^a   Goyal, A K ^a   Buchter, S C ^a   Turner, G W ^a   Manfra, M J ^a   Calawa, S D ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THICKNESS MEASUREMENT;

DIELECTRIC STACKS; QUANTUM DEFECT; SEMICONDUCTING GALLIUM INDIUM ANTIMONIDE; SEMICONDUCTING INDIUM ARSENIDE;

SEMICONDUCTOR LASERS;

EID: 0034542429     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)