Ultrashort (≤150 fs) carrier relaxation time of intersubband transition in AlGaN/GaN multiple quantum wells

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Volumn , Issue , 2000, Pages 358-359

  Iizuka, Norio ^a   Kaneko, Kei ^a   Suzuki, Nobuo ^a   Asano, Takashi ^a   Noda, Susumu ^a   Wada, Osamu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAFAST PHENOMENA;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; INTERSUBBAND TRANSITION; ULTRAFAST RELAXATION PROCESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034539437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)