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Volumn , Issue , 2000, Pages 446-455
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ESD-level circuit simulation - impact of gate RC-delay on HBM and CDM behavior
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CMOS INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
ELECTRIC DISCHARGES;
ELECTRIC RESISTANCE;
ELECTROSTATICS;
MOS DEVICES;
ELECTROSTATIC DISCHARGES (ESD);
METAL INTERCONNECTS;
NONLINEAR GATE CAPACITANCES;
DELAY CIRCUITS;
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EID: 0034538960
PISSN: 07395159
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (13)
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References (9)
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