Correlation between the reliability of ultra-thin ISSG SiO2 and hydrogen content

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4181, Issue 1, 2000, Pages 220-231

  Luo, T Y ^a,b   Al Shareef, H N ^b   Brown, G A ^b   Laughery, M ^b   Watt, V H C ^b   Karamcheti, A ^b   Jackson, M D ^b   Huff, H R ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b SEMATECH   (United States)

Author keywords

Charge to breakdown (QBD); In situ steam generated (ISSG) oxide; SILC; Strained Si O bonds; Structural transition layer (STL)

Indexed keywords

AMORPHOUS SILICON; ELECTROCHEMICAL ELECTRODES; GATES (TRANSISTOR); HYDROGEN; LEAKAGE CURRENTS; MOS CAPACITORS; SILICA; SUBSTRATES; THIN FILM DEVICES;

CHARGE-TO-BREAKDOWN; STRUCTURAL TRANSITION LAYER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034538798     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.395732     Document Type: Article

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