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Volumn 71, Issue 6, 2000, Pages 615-618

Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; NIOBIUM; OXIDATION; OXYGEN; SEGREGATION (METALLOGRAPHY); SINGLE CRYSTALS; STOICHIOMETRY; THIN FILMS; YTTRIUM COMPOUNDS;

EID: 0034517064     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000569     Document Type: Article
Times cited : (11)

References (15)
  • 6
    • 85037445053 scopus 로고    scopus 로고
    • Ph.D. thesis, University of Fribourg, Switzerland
    • J. Hayoz: Ph.D. thesis, University of Fribourg, Switzerland 1999; M. Bovet, J. Hayoz, L. Schlapbach, P. Aebi: to be published
    • (1999)
    • Hayoz, J.1
  • 14
    • 0018436046 scopus 로고
    • The interlayer distance is used to calculate the elastic mean free path of the photoelectrons (see M.P. Seah, W.A. Dench: Surf. Interface Anal. 1, 2 (1979))
    • (1979) Surf. Interface Anal. , vol.1 , pp. 2
    • Seah, M.P.1    Dench, W.A.2
  • 15
    • 0018997830 scopus 로고
    • Oxygen is dissolved to ≈ 0.1 at % in the Nb bulk (K.H. Rieder, Appl. Surf. Sci., 4, 183 (1980))
    • (1980) Appl. Surf. Sci. , vol.4 , pp. 183
    • Rieder, K.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.