Defect distribution and chemical etching of Langasite (La3Ga5SiO14) crystals grown by the Czochralski method

Materials Letters

Volumn 46, Issue 6, 2000, Pages 354-357

  Hyoung Jung, Il ^a   Bo Shim, Kwang ^a   Ho Auh, Keun ^a   Fukuda, Tsuguo ^b  

^a Hanyang University   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ETCHING; PIEZOELECTRIC MATERIALS; SINGLE CRYSTALS; SURFACE TREATMENT;

LANTHANUM GALLIUM SILICON OXIDE;

LANTHANUM COMPOUNDS;

EID: 0034515141     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(00)00200-7     Document Type: Article

References (7)

1. Capelle B., Zarka A., Detaint J., Schwartzel J., Ivanez A., Philippot E., Denis J.P. IEEE Int. Freq. Control Symp. 1994.
2. Popov P.A., Egorov G.V., Pisarevski Yu.V., Senyushchenkov P.A., Mill B.V. Phys. Status Solidi. 38(1):1996.
3. Satoh H., Mori A. Jpn. J. Appl. Phys. 36:1997;3071-3073.
4. Laprus W., Danicki E. J. Appl. Phys. 81(2):1997.
5. Sato M., Moroishi K., Ishigami S. IEEE Int. Freq. Control Symp. 379:1996;383.
6. Eichler H.J., Ashkenasi D., Jian H., Kaminski A.A. Phys. Status Solidi. 146:1994;833.
7. Tarasova L.S., Skorikov V.M. Inorg. Mater. 32(4):1996;415-418.