Germanium on silicon pin photodiodes for the near infrared

Electronics Letters

Volumn 36, Issue 25, 2000, Pages 2095-2096

  Masini, G ^a   Colace, L ^a   Assanto, G ^a   Luan, H C ^b   Kimerling, L C ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

NEAR INFRARED (NIR);

INFRARED DETECTORS;

EID: 0034514768     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001448     Document Type: Article

References (7)

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2. HUANG, F.Y., ZHU, X., TANNER, M.O., and WANG, K.L.: 'Normal incidence strained layer superlattice GeSi/Si photodiodes near 1.3μm', Appl. Phys. Lett., 1995, 67, pp. 566-568
3. COLACE, L., MASINI, G., ASSANTO, G., LUAN, H.-C., WADA, K., and KIMERLING, L.C.: 'Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates', Appl. Phys. Lett., 2000, 76, pp. 1231-1233
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7. SAMAVEDAM, S.B., CURRIE, S.M.T., LANGDO, T.A., and FITZGERALD, E.A.: 'High quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers', Appl. Phys. Lett., 1998, 73, pp. 2125-2127