Pattern-size effect on electron shading

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 46-49

  Mise, Nobuyuki ^a   Usui, Tatehito ^a   Tanaka, Junichi ^a   Nojiri, Kazuo ^a   Ono, Tetsuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRODES; ELECTRODYNAMICS; GATES (TRANSISTOR); MONTE CARLO METHODS; MOS CAPACITORS; NETWORKS (CIRCUITS); PLASMA APPLICATIONS; THRESHOLD VOLTAGE;

ELECTRON SHADING; PATTERN SIZE; PLASMA INDUCED CHARGING DAMAGE; STEADY STATE ELECTRON SHADING;

PHOTORESISTS;

EID: 0034512756     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)