Novel trench clustered insulated gate bipolar transistor (TCIGBT)

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 613-615

  Spulber, O ^a   Sweet, M ^a   Vershinin, K ^a   Ngw, C K ^a   Ngwendson, L ^a   Bose, J V S C ^a   De Souza, M M ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ELECTRIC FIELDS; ELECTRIC INSULATORS; GATES (TRANSISTOR); MOSFET DEVICES;

TRENCH CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR (TCIGBT);

BIPOLAR TRANSISTORS;

EID: 0034512670     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887483     Document Type: Article

References (5)

1. H. R. Chang, B. J. Baliga, J. W. Kretchmer, and P. A. Piacente, "Insulated gate bipolar transistor (IGBT) with a trench gate structure," in IEDM Tech. Dig. , 1987, pp. 674-677.
2. M. Kitagawa et al., "A 4500 V injection-enhanced insulated-gate bipolar transistor (IEGT) operating in a mode similar to a thyristor," in IEDM Tech. Dig. , 1993, pp. 679-682.
3. M. S. Shekar, J. Korec, and B. J. Baliga, "Trench gate emitter switched thyristors," in Proc. ISPSD , 1994, pp. 189-194.
4. MEDICI User Manual: Technol. Modeling Assoc..
5. B. J. Baliga, "The MOS-gated emitter switched thyristor," IEEE Electron Device Lett., vol. 11, pp. 75-77, 1990.