Photo-induced ultrathin electropolishing layers on silicon: Formation, composition and structural properties

Applied Surface Science

Volumn 168, Issue 1-4, 2000, Pages 194-197

  Jungblut, H ^a   Lewerenz, H J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; PH EFFECTS; PHOTOCHEMICAL REACTIONS; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACE CHEMISTRY;

ULTRATHIN ELECTROPOLISHING LAYERS;

ELECTROLYTIC POLISHING;

EID: 0034511474     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00589-4     Document Type: Article

References (5)

1. Gerischer H., Lübke M. Ber. Bunsenges. Phys. Chem. 92:1988;573.
2. H.J. Lewerenz, H. Jungblut, in: S.A. Campbell, H.J. Lewerenz (Eds.), Semiconductor Micromachining, Vol. 1, Wiley, 1998, pp. 217-275.
3. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., A Yarmoff J. Phys. Rev. B. 38:1988;6084.
4. Hochella M.F. Jr., Carim A.H. Surf. Sci. 197:1988;L260.
5. H.J. Lewerenz, H. Jungblut, S. Rauscher, Electrochim. Acta, submitted for publication.