Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 688-692

  Imaizumi, Mitsuru ^a,b   Adachi, Mitsuhiro ^b   Fujii, Yasunori ^b   Hayashi, Yasuhiko ^b   Soga, Tetsuo ^b   Jimbo, Takashi ^b   Umeno, Masayoshi ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ENERGY GAP; FILM GROWTH; GLASS; HALL EFFECT; POLYCRYSTALLINE MATERIALS; QUARTZ; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SOLAR CELLS; SPACE APPLICATIONS; SUBSTRATES;

PREFERENTIAL COLUMNAR GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034511245     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00801-0     Document Type: Article

References (7)

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