Hot-electron relaxation via optical phonon emissions in GaAs/AlxGa1-xAs quantum well structures: Dependence upon the alloy composition and barrier width

Nanotechnology

Volumn 11, Issue 4, 2000, Pages 227-232

  Sun, K W ^a   Chang, H Y ^a   Wang, C M ^a   Wang, S Y ^b   Lee, C P ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONS; HETEROJUNCTIONS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BARRIER WIDTH; ELECTRON-OPTICAL-PHONON INTERACTIONS; OPTICAL PHONON EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034511139     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/11/4/307     Document Type: Article

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