Laser optogalvanic and jet spectroscopy of germylene (GeH2): new spectroscopic data for an important semiconductor growth intermediate

Journal of Chemical Physics

Volumn 113, Issue 21, 2000, Pages 9567-9576

  Smith, Tony C ^a   Clouthier, Dennis J ^a   Sha, Wei ^b   Adam, Allan G ^b  

^a UNIVERSITY OF KENTUCKY   (United States)

^b UNIVERSITY OF NEW BRUNSWICK   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; FLUORESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROUND STATE; MOLECULAR VIBRATIONS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS; SYNTHESIS (CHEMICAL);

FLUORESCENCE SPECTROSCOPY; GERMYLENE; LASER OPTOGALVANIC SPECTROSCOPY; SEMICONDUCTOR GROWTH INTERMEDIATE;

GERMANIUM COMPOUNDS;

EID: 0034507299     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1319936     Document Type: Article

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