Transmission electron microscopy study of hexagonal GaN film grown on GaAs(0 0 1) substrate by using AlAs nucleation layer

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 379-383

  Wan, L ^a   Duan, X F ^a   Chen, H ^a   Liu, Hongfei ^a   Li, Zhiqiang ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA SOURCE-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0034506401     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00836-8     Document Type: Article

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