Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Nanotechnology

Volumn 11, Issue 4, 2000, Pages 241-245

  Kozlovsky, V I ^a   Sadofyev, Yu G ^a   Litvinov, V G ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b RYAZAN STATE RADIO ENGINEERING UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

BAND ALIGNMENT; VALANCE BANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034506182     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/11/4/310     Document Type: Article

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