Structural, optical and electrical characteristics of silicon carbon nitride

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 219-225

  Chen, L C ^a   Wu, C T ^b   Wen, C Y ^a   Wu, J J ^a   Liu, W T ^b   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; ELLIPSOMETRY; MIS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THIN FILMS;

ION BEAM SPUTTER DEPOSITION (IBD); SILICON CARBON NITRIDES; ULTRAVIOLET-VISIBLE TRANSMITTANCES;

SEMICONDUCTING FILMS;

EID: 0034505573     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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