Effect of pulsed plasma, pressure, and RF bias on electron shading damage

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 50-53

  Siu, Stanley ^a   Vahedi, Vahid ^a   Patrick, Roger ^a   Baldwin, Scott ^a   Williams, Norm ^a   Alberti, Jason ^a   Alba, Simone ^a   Vassalli, Omar ^a   Valentini, Grazia ^a   Colombo, Paolo ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ETCHING; MATHEMATICAL MODELS; PLASMA APPLICATIONS; PRESSURE EFFECTS; TRANSISTORS;

ANTENNA DEVICE WAFERS; ELECTRON SHADING DAMAGE; N-CHANNEL TRANSISTORS; PULSED PLASMA; TOPOGRAPHY INDUCED CHARGING;

ELECTRODYNAMICS;

EID: 0034503811     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)