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Volumn 5, Issue , 2000, Pages 2866-2872
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New validated physically based IGCT model for circuit simulation of snubberless and series operation
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Author keywords
[No Author keywords available]
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Indexed keywords
ANODES;
CARRIER MOBILITY;
CATHODES;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON SCATTERING;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR SWITCHES;
CIRCUIT SIMULATION;
INTEGRATED GATE COMMUTATED THYRISTOR;
THYRISTORS;
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EID: 0034501820
PISSN: 01972618
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (11)
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References (10)
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