Effect of a stacking fault on the electronic properties of dopants in gallium arsenide

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10235-10239

  Schmidt, T M ^a   Justo, J F ^b   Fazzio, A ^b  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRONIC PROPERTIES; SEMICONDUCTOR DOPING; SILICON; STACKING FAULTS;

SILICON IMPURITIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034499346     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/323     Document Type: Article

References (17)

1. Alexander H 1986 Dislocations in Solids vol 7, ed F R N Nabarro (Amsterdam: Elsevier) p 115
2. Sitch P, Jones R, Öberg S and Heggie M I 1994 Phys. Rev. B 50 R17 717
3. Justo J F, de Koning M, Cai W and Bulatov V V 2000 Phys. Rev. Lett. 84 2172
4. Käckell P, Furthmüller J and Bechstedt F 1998 Phys. Rev. B 58 1326
5. Stampfl C and Van de Walle C G 1998 Phys. Rev. B 57 15 052
6. Antonelli A, Justo J F and Fazzio A 1999 Phys. Rev. B 60 4711
7. Justo J F, Antonelli A, Schmidt T M and Fazzio A 1999 Physica B 273+274 473
8. Hirth J P and Lothe J 1982 Theory of Dislocations (New York: Wiley)
9. Bockstedte M, Kley A, Neugebauer J and Scheffler M 1997 Comput. Phys. Commun. 107 187
10. Bachelet G B, Hamann D R and Schluter M 1982 Phys. Rev. B 26 4199
11. Kleinman L and Bylander D M 1982 Phys. Rev. Lett. 48 1425
12. Maiti A, Chisholm M F, Pennycook S J and Pantelides S T 1996 Phys. Rev. Lett. 77 1306
13. Kaplan T, Liu F, Mostoller M, Chisholm M F and Milman V 2000 Phys. Rev. B 61 1674
14. Chadi D J and Chang K J 1988 Phys. Rev. Lett. 61 873
15. Malloy K J and Khachaturyan K 1993 Semiconductors and Semimetals vol 38, ed E K Weber (New York: Academic) p 235
16. Miwa R H and Schmidt T M 1999 Appt. Phys. Lett. 74 1999 J. Phys.: Condens. Matter 12 (2000) 10241-10247.
17. Miwa R H and Schmidt T M 1999 Appt. Phys. Lett. 74 1999 J. Phys.: Condens. Matter 12 (2000) 10241-10247.