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Volumn , Issue , 2000, Pages 477-484
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Reducing device yield fallout at wafer level test with electrohydrodynamic (EHD) cleaning
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Author keywords
[No Author keywords available]
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Indexed keywords
ABRASION;
CLEANING;
CONTACT ANGLE;
DEFECTS;
ELECTRODYNAMICS;
FAILURE ANALYSIS;
HYDRODYNAMICS;
IMPURITIES;
INTEGRATED CIRCUIT MANUFACTURE;
MOLECULES;
SILICON WAFERS;
TUNGSTEN CARBIDE;
CONTACT RESISTANCE;
DEVICE YIELD FALLOUT;
ELECTROHYDODYNAMIC CLEANING;
OFFLINE ABARASIVE CLEANING;
PROBE CARD;
INTEGRATED CIRCUIT TESTING;
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EID: 0034482514
PISSN: 10893539
EISSN: None
Source Type: Journal
DOI: 10.1109/TEST.2000.894240 Document Type: Article |
Times cited : (3)
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References (15)
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