Influence of the pre-anneal ambient on the gate oxide integrity effect of copper contamination

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2000, Pages 367-371

  Vermeire, Bert ^a   Parks, Harold G ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTAMINATION; COPPER DEPOSITS; DEEP LEVEL TRANSIENT SPECTROSCOPY; OXIDATION;

GATE OXIDE INTEGRITY; PRE-ANNEALING;

SILICON WAFERS;

EID: 0034475780     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)