Hall mobility measurement in Double-Gate SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 118-119

  Vandooren, A ^a   Cristoloveanu, S ^a   Colinge, J P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; LEAKAGE CURRENTS; MAGNETORESISTANCE; MOSFET DEVICES; TRANSCONDUCTANCE;

GATE-ALL-AROUND HALL STRUCTURES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034474686     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)