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Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 64, Issue 12, 2000, Pages 1141-1147

Anomalous defect structure formed on GaSb surface by low temperature Sn ion-implantation and its formation mechanism

(6) Nitta, Noriko a Taniwaki, Masafumi a Suzuki, Tomoo a Hayashi, Yoshihiko b Satoh, Yuhki b Yoshiie, Toshimasa b

a KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY DISPERSIVE SPECTROSCOPY; ION IMPLANTATION; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034474217 PISSN: 00214876 EISSN: None Source Type: Journal
DOI: 10.2320/jinstmet1952.64.12_1141 Document Type: Article

Times cited : (15)

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