Highly uniform 1.5 μm wavelength deeply etched semiconductor/benzocyclobutene distributed Bragg reflector lasers

Japanese journal of applied physics

Volumn 39, Issue 12 B, 2000, Pages

  Raj, Mothi Madhan ^a   Wiedmann, Jorg ^a   Saka, Yoshikazu ^a   Ebihara, Koji ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; THRESHOLD LOGIC;

DISTRIBUTED BRAGG REFLECTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 0034474097     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1297     Document Type: Article

References (8)