Preparation of Ir-based thin film electrodes by MOCVD

IEEE International Symposium on Applications of Ferroelectrics

Volumn 2, Issue , 2000, Pages 961-964

  Shimizu, M ^a   Kita, K ^a   Fujisawa, H ^a   Tomozawa, N ^a   Niu, H ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; FERROELECTRIC MATERIALS; FILM PREPARATION; IRIDIUM; IRIDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; THERMOGRAVIMETRIC ANALYSIS;

BUBBLING METHOD; IRIDIUM FILM; THIN FILM ELECTRODE;

THIN FILMS;

EID: 0034473083     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. 2
2. 2 electrodes
3. Low-temperature vapor deposition of highly-purity iridium coatings from cyclooctadiene complexes of iridium
4. Preparation of iridium films by liquid source metalorganic chemical vapor deposition
5. An XPS study of the composition of iridium films obtained by MO CVD
6. Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition
7. Metalorganic chemical vapor deposition of Ir films with iridium acetylacetonate and carbonyl precursors
8. Growth of iridium films by metal organic chemical vapor deposition
9. Chemical vapor deposition (CVD) of iridium and platinum films and gas-phase chemical etching of iridium thin films