Interaction of threshold voltage and mobility temperature dependencies applied to stabilization of current and voltage

Midwest Symposium on Circuits and Systems

Volumn 3, Issue , 2000, Pages 1022-1025

  Filanovsky, I M ^a   Lim, Su Tarn ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; ELECTRON MOBILITY; INTEGRATED CIRCUIT LAYOUT; TEMPERATURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; VOLTAGE CONTROL;

BIAS CURRENT; DIODE CONNECTED TRANSISTOR; MOBILITY TEMPERATURE; ZERO TEMPERATURE COEFFICIENT;

MOSFET DEVICES;

EID: 0034466259     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Design considerations in high-temperature analog CMOS integrated circuits
2. Temperature-independent output voltage generated by threshold voltage of an NMOS transistor