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Volumn 33, Issue 4, 2000, Pages 542-547
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Optimization of parameters of (Hg, Cd)Te n+-p photodiodes for 10.6-μm spectral region operating at near-room temperatures
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ENERGY GAP;
INFRARED DETECTORS;
NUMERICAL ANALYSIS;
OPTIMIZATION;
RANDOM PROCESSES;
SEMICONDUCTING TELLURIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SPECTRUM ANALYSIS;
TEMPERATURE;
THERMAL NOISE;
CARRIER RECOMBINATION;
JOHNSON-NYQUIST NOISE;
MERCURY CADMIUM TELLURIDE;
PHOTODIODES;
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EID: 0034460320
PISSN: 00709816
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (5)
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References (30)
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