Influence of the N+ floating emitter on the on-state characteristics of the Trench EST

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2000, Pages 329-332

  Spulber, O ^a   Sweet, M ^a   Vershinin, K ^a   Ngw, Y ^a   Ngwendson, L ^a   Subhas Chandra Bose, J V ^a   De Souza, M M ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DOPING; THYRISTORS;

FLOATING EMMITERS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034453458     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)