Carrier lifetime characterization using an optimized free carrier absorption technique

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 299-302

  Hille, F ^a   Hoffmann, L ^a   Schulze, H J ^a   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; PLATINUM; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

CARRIER LIFETIME; OPTIMIZED FREE CARRIER ABSORPTION TECHNIQUE; PLATINUM-DIFFUSED POWER DIODE; SHOCKLEY-READ-HALL MODEL;

SEMICONDUCTOR DEVICE TESTING;

EID: 0034448532     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)