Breakdown voltages phenomena at molding compound-chip interface

Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium

Volumn , Issue , 2000, Pages 1-9

  Scandurra, Antonino ^a   Zafarana, Roberto ^a   Tenya, Yuichi ^b   Pignataro, Salvatore ^c  

^a STMICROELECTRONICS   (Italy)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; BINDING ENERGY; COMPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; GLASS TRANSITION; HIGH TEMPERATURE TESTING; INTERFACES (MATERIALS); IONS; POLYETHERS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH TEMPERATURE REVERSE BIASED TEST; POLYOXYALKYLENE ETHERS; VOLUME RESISTIVITY;

ELECTRONICS PACKAGING;

EID: 0034447190     PISSN: 10898190     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEMT.2000.910702     Document Type: Article

References (9)

1. Mittal festschrift