GaN/AlGaN HFETs fabricated on a SiC substrate

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2000, Pages 71-75

  Uren, M J ^a   Martin, T ^a   Birbeck, J C ^a   Balmer, R ^a   Hughes, B T ^a   Guest, J J ^a   Hydes, A J ^a   Willis, H ^a   Jelfs, T ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HEAT CONDUCTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SPECTRUM ANALYSIS; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL DIFFUSION;

SPECTROSCOPIC REFLECTOMETRY;

FIELD EFFECT TRANSISTORS;

EID: 0034441745     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)