Review of Silicon-Germanium BICMOS technology after 4 years of production and future directions

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2000, Pages 7-10

  Subbanna, S ^a   Freeman, G ^a   Ahlgren, D ^a   Jagannathan, B ^a   Greenberg, D ^a   Johnson, J ^a   Bacon, P ^a   Najarian, R ^a   Herman, D ^a   Meyerson, B ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

GERMANIUM SILICON (SIGE) TECHNOLOGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034441427     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)